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1. product pro?le 1.1 general description dual high-voltage switching diodes, encapsulated in small surface-mounted device (smd) plastic packages. [1] /dg: halogen free 1.2 features 1.3 applications n high-speed switching at high voltage n high-voltage general-purpose switching 1.4 quick reference data [1] when switched from i f = 10 ma to i r = 10 ma; r l = 100 w ; measured at i r = 1 ma. bav23 series dual high-voltage switching diodes rev. 06 3 march 2008 product data sheet table 1. product overview type number [1] package con?guration nxp jedec bav23a/dg sot23 to-236ab dual common anode bav23c/dg sot23 to-236ab dual common cathode bav23s sot23 to-236ab dual series bav23s/dg bav23 sot143b - dual isolated bav23/dg n high switching speed: t rr 50 ns n low capacitance: c d 2pf n low leakage current n small smd plastic package n repetitive peak reverse voltage: v rrm 250 v table 2. quick reference data symbol parameter conditions min typ max unit per diode i r reverse current v r = 200 v - - 100 na v r reverse voltage - - 200 v t rr reverse recovery time [1] --50ns
bav23_ser_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 3 march 2008 2 of 12 nxp semiconductors bav23 series dual high-voltage switching diodes 2. pinning information table 3. pinning pin description simpli?ed outline graphic symbol bav23a/dg 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode bav23c/dg 1 anode (diode 1) 2 anode (diode 2) 3 common cathode bav23s; bav23s/dg 1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 1), anode (diode 2) bav23; bav23/dg 1 cathode (diode 1) 2 cathode (diode 2) 3 anode (diode 2) 4 anode (diode 1) 12 3 006aab099 12 3 12 3 006aab034 12 3 12 3 006aaa763 12 3 2 1 3 4 006aab100 12 43
bav23_ser_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 3 march 2008 3 of 12 nxp semiconductors bav23 series dual high-voltage switching diodes 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china 5. limiting values table 4. ordering information type number package name description version bav23a/dg - plastic surface-mounted package; 3 leads sot23 bav23c/dg bav23s bav23s/dg bav23 - plastic surface-mounted package; 4 leads sot143b bav23/dg table 5. marking codes type number marking code [1] bav23a/dg zy* bav23c/dg zx* bav23s *v5 bav23s/dg yd* bav23 l30 bav23/dg *n1 table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per diode v rrm repetitive peak reverse voltage - 250 v v r reverse voltage - 200 v i f forward current [1] - 225 ma [2] - 125 ma i frm repetitive peak forward current - 625 ma i fsm non-repetitive peak forward current square wave [3] t p =1 m s-9a t p = 100 m s-3a t p =10ms - 1.7 a
bav23_ser_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 3 march 2008 4 of 12 nxp semiconductors bav23 series dual high-voltage switching diodes [1] single diode loaded. [2] double diode loaded. [3] t j =25 c prior to surge. [4] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. 7. characteristics [1] when switched from i f = 10 ma to i r = 10 ma; r l = 100 w ; measured at i r = 1 ma. per device p tot total power dissipation t amb 25 c [4] - 250 mw t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c table 6. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit table 7. thermal characteristics symbol parameter conditions min typ max unit per device r th(j-a) thermal resistance from junction to ambient in free air [1] - - 500 k/w r th(j-sp) thermal resistance from junction to solder point - - 360 k/w table 8. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per diode v f forward voltage i f = 100 ma - - 1.0 v i f = 200 ma - - 1.25 v i r reverse current v r = 200 v - - 100 na v r = 200 v; t j = 150 c - - 100 m a c d diode capacitance f = 1 mhz; v r =0v - - 2 pf t rr reverse recovery time [1] --50ns
bav23_ser_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 3 march 2008 5 of 12 nxp semiconductors bav23 series dual high-voltage switching diodes (1) t amb = 150 c (2) t amb =85 c (3) t amb =25 c (4) t amb = - 40 c based on square wave currents. t j =25 c; prior to surge fig 1. forward current as a function of forward voltage; typical values fig 2. non-repetitive peak forward current as a function of pulse duration; maximum values (1) t amb = 150 c (2) t amb =85 c (3) t amb =25 c (4) t amb = - 40 c fig 3. reverse current as a function of reverse voltage; typical values v f (v) 0 1.6 1.2 0.4 0.8 006aab212 200 400 600 i f (ma) 0 (1) (3) (4) (2) mbg703 10 1 10 2 i fsm (a) 10 - 1 t p ( m s) 110 4 10 3 10 10 2 006aab213 10 2 i r ( m a) v r (v) 0 250 200 100 150 50 10 1 10 - 1 10 - 2 10 - 3 10 - 4 10 - 5 (4) (1) (2) (3)
bav23_ser_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 3 march 2008 6 of 12 nxp semiconductors bav23 series dual high-voltage switching diodes 8. test information f = 1 mhz; t amb =25 c fr4 pcb, standard footprint (1) single diode loaded. (2) double diode loaded. fig 4. diode capacitance as a function of reverse voltage; typical values fig 5. forward current as a function of ambient temperature; derating curve mbg447 048 6 2 v r (v) 1.0 0.8 0.2 0.6 0.4 c d (pf) t amb ( c) 0 200 150 50 100 006aab214 100 200 300 i f (ma) 0 (2) (1) (1) i r =3ma fig 6. reverse recovery time test circuit and waveforms t rr (1) + i f t output signal t r t p t 10 % 90 % v r input signal v = v r + i f r s r s = 50 w i f d.u.t. r i = 50 w sampling oscilloscope mga881
bav23_ser_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 3 march 2008 7 of 12 nxp semiconductors bav23 series dual high-voltage switching diodes 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 14 . fig 7. package outline sot23 (to-236ab) fig 8. package outline sot143b 04-11-04 dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 04-11-16 dimensions in mm 3.0 2.8 1.1 0.9 2.5 2.1 1.4 1.2 1.7 1.9 0.48 0.38 0.15 0.09 0.45 0.15 0.88 0.78 2 1 3 4 table 9. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 bav23a/dg sot23 4 mm pitch, 8 mm tape and reel -215 -235 bav23c/dg bav23s bav23s/dg bav23 sot143b 4 mm pitch, 8 mm tape and reel -215 -235 bav23/dg
bav23_ser_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 3 march 2008 8 of 12 nxp semiconductors bav23 series dual high-voltage switching diodes 11. soldering fig 9. re?ow soldering footprint sot23 (to-236ab) fig 10. wave soldering footprint sot23 (to-236ab) solder resist occupied area solder lands solder paste dimensions in mm sot023 1.00 0.60 (3x) 1.30 1 2 3 2.50 3.00 0.85 2.70 2.90 0.50 (3x) 0.60 (3x) 3.30 0.85 sot023 4.00 4.60 2.80 4.50 1.20 3.40 3 21 1.20 (2x) preferred transport direction during soldering dimensions in mm solder resist occupied area solder lands
bav23_ser_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 3 march 2008 9 of 12 nxp semiconductors bav23 series dual high-voltage switching diodes dimensions in mm fig 11. re?ow soldering footprint sot143b fig 12. wave soldering footprint sot143b msa441 0.60 (4x) 1.30 2.50 3.00 2.70 0.50 (3x) 0.60 (3x) 3.25 43 2 1 0.90 1.00 solder lands solder resist occupied area solder paste msa422 4.00 4.60 1.20 (3 ) 4.45 12 3 4 1.15 3.40 1.00 preferred transport direction during soldering solder lands solder resist occupied area dimensions in mm
bav23_ser_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 3 march 2008 10 of 12 nxp semiconductors bav23 series dual high-voltage switching diodes 12. revision history table 10. revision history document id release date data sheet status change notice supersedes bav23_ser_6 20080303 product data sheet - bav23s_5 bav23_2 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? type numbers bav23a/dg, bav23c/dg, bav23s/dg and bav23/dg added ? t ab le 1 product o v er vie w : added ? t ab le 2 quic k ref erence data : added ? t ab le 5 mar king codes : amended ? t ab le 8 : for bav23 and bav23s maximum value for c d diode capacitance amended to 2 pf ? figure 7 and 8 : superseded by minimized package outline drawings ? section 10 p ac king inf or mation : added ? section 11 solder ing : added ? section 13 legal inf or mation : updated bav23s_5 20011012 product speci?cation - bav23s_4 bav23_2 19960917 product speci?cation - bav23_1
bav23_ser_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 3 march 2008 11 of 12 nxp semiconductors bav23 series dual high-voltage switching diodes 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors bav23 series dual high-voltage switching diodes ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 3 march 2008 document identifier: bav23_ser_6 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 packing information. . . . . . . . . . . . . . . . . . . . . . 7 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 contact information. . . . . . . . . . . . . . . . . . . . . 11 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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